This talk shows how integrating p-type NiO to form NiO/Ga_₂O_₃ heterojunction rectifiers overcomes that barrier, enabling record-class breakdown and Ampere-class operation. It will cover device structure/process optimization, thermal stability to high temperatures, and radiation response – with direct ties to today’s priorities: EV fast charging, AI data‑center power systems, and aerospace/space‑qualified power electronics.

An interactive Q&A session follows the presentation.

Jian-Sian Li received the PhD in chemical engineering from the University of Florida in 2024, where his research focused on NiO/β-Ga_₂O_₃ heterojunction power rectifiers, includes device design, process optimization, fast switching, high-temperature stability, and radiation tolerance (γ, neutron, proton). His work includes extensive electrical characterization and microscopy/TCAD analysis supporting device physics and reliability in harsh environments. Previously, he completed his BS and MS at National Taiwan University (2015, 2018), with research spanning phoretic/electrokinetic colloids, polymers for OFETs/PSCs, and solid-state polymer electrolytes for Li-ion batteries. He has since transitioned to industry at Micron Technology.

The post Fabrication and device performance of Ni0/Ga₂O₃ heterojunction power rectifiers appeared first on Physics World.